Effect of B2O3 Dopant on Dielectric Properties of Ba0.6Sr0.4TiO3/MgO Ceramics

B2O3掺杂对Ba0.6Sr0.4TiO3/MgO陶瓷介电性能的影响

The Influence of La2O3 Dopant on the Dielectric Properties of Ba0.6Sr0.4TiO3-MgO

La2O3掺杂对Ba0.6Sr0.4TiO3-MgO介电性能的影响

Effects of Pr Dopant on Grain Boundary and Electrical Properties of Ce5.2Sm0.8MoO(subscript 15-δ)

Pr掺杂对Ce5.2Sm0.8MoO(下标 15-δ)晶界及电性能的影响

Influence of Sb Dopant on the Conductivity and Gas Sensitivity of ZnO Thick Films

Sb掺杂对ZnO厚膜的电导和气敏性能的影响

Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact

半导体工艺材料的检验.用电容--电压法和水银接点确定晶朊半导体材料中掺杂物的断面

Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 7: Determination of CO and H in nitrogen by gaschromatography and reduction gasdetector

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第7部分:用气体色谱法和还原气体探测器测定氮气中CO和H2

Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 8: Determination of the concentration of the particle number in flowing nitrogen using laser particle counter

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第8部分:用激光粒子计数器测定流动氮中粒子数的浓度

(Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C-C-hydrocarbons in gaseous hydrogen chloride by ga

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第9部分:用气相色谱法测定气态氯化氢中氧、氮、一氧化碳

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of water traces in gaseous hydrogen chloride by a diphosphorus pentoxide cell

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.用五氧化二磷件测定气相氯化氢中的微量水

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C-C-hydrocarbons in nitrogen by gas-chromatography

半导体工艺材料的检验.载运气体和混合气体中杂质的测定.用气体色谱法测定氮气中C1C3碳氢化合物

Testing of materials for semiconductor technology-Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods-Part 1: Diborane in hydrogen diborane mixtures

半导体工艺材料的试验.用湿式化学法测定添加气体混合剂中成份的体积构成.第1部分:氢-乙硼烷混合物中的乙硼

Testing of materials for semiconductor technology-Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods-Part 2: Phosphine in nitrogen phosphine mixtures

半导体工艺材料的试验.用湿式化学法测定添加气体混合剂中成份的体积构成.第2部分:氮-磷混合物中的磷

Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程

The Effect of Dopant Sb on the Superhydrophilicity and the Microstructure of the Nanoscale TiO2 Thin Film

掺杂Sb对纳米TiO2薄膜的超亲水性和微结构的影响

Effect of Vanadium and silicon Dopant on Super-hydrophilicity of TiO2 Thin Films

掺杂钒和硅对TiO2薄膜超亲水性的影响

Influence of Dopant on Void Defects in Large-diameter CZSi Crystal

掺杂剂种类对大直径直拉硅单晶中void微缺陷的影响

Impact Studies of Dopant Concentration on the Electroluminescence Properties of Electrolumincent Devices Doped by Tetraphenylporphyrin

掺杂浓度对四苯基卟啉掺杂电致发光器件的发光性能影响研究

Highly Efficient Preparation of Enantiopure 1-phenyl-1, 2-ethanediol as Liquid Crystal Chiral Dopant by Immobilized Cells Catalyzing Deracemization

固定化细胞生物催化制备(S)-苯基乙二醇的研究

In contrast to the CVD process, MBE does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully

和化学气相淀积工艺相反，虽然在操作中对于固体砷还是必须非常小心掌握，但是，分子束外延不需要庞大的安定保险装置。

A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant

基于MBE生长的一种Be掺杂InGaAs基区的新结构InGaP/InGaAs/GaAs DHBT

To treat(a semiconductor)with a dopant .

加入掺杂剂用掺杂剂给(半导体)涂上保护层

Effects on the Properties of Tetracyanoquinodimethane Thin Films by Dopant Poly (methyl Methacrylate)

聚甲基丙烯酸甲酯掺杂剂对7,7,8,8-四氰基苯醌二甲烷薄膜特性的影响

Improvement of Electroluminescene Utilizing Emitting Assist Dopant for Red Organic Light Emission

利用辅助掺杂改善红光有机电致发光器件的性能

Polyaniline Nanofibers Prepared by Using Ferric Chloride as Both Oxidant and Dopant

氯化铁氧化掺杂的聚苯胺纳米纤维团簇

Effect of Pb-dopant on the Dielectric Properties of BST Thin Films

铅掺杂对钛酸锶钡铁电薄膜性能的影响

Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9

砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。

Preparation of Polypyrrole with Dopant of NaCl in Aqueous Solution by Voltammetric Cycling

水溶液中以NaCl为掺杂剂动电位法合成聚吡咯

Effect of Sr Acceptor Dopant on Electrical Properties of TiO2 Varistor Ceramics

锶受主掺杂对TiO2压敏陶瓷电性能的影响

Effect of ZnFe2O4 Dopant on Structural Phase Transformation and Photocatalytic Activity of TiO2 Nanopowders

铁酸锌掺杂对二氧化钛结构相变及光催化性能的影响

Additional contributions to the refractive index are expected to come from the dopant (6. 8)as well as from the electro-optic effect

预料其它对折射率的影响来自掺杂剂以及电光效应。

p dopant

p 型掺杂剂

dopant gas

n.掺杂气

donor dopant

施钟质

p type dopant

p 型掺杂剂

n type dopant

施钟质, n 型杂质

n dopant source

n 型杂质源

dopant material

n.掺杂材料,合金材料

impurity dopant

杂质

dopant diffusion

掺杂剂扩散

p dopant modifier

p 型掺杂剂

planar dopant host

片状扩散源

n type dopant atom

n 型掺杂剂原子

semiconductor dopant

半导体掺杂物

dopant redistribution

掺杂剂再分布

buried collector dopant

隐埋集电极用掺杂剂

impurity dopant incorporation

掺杂