Effect of B2O3 Dopant on Dielectric Properties of Ba0.6Sr0.4TiO3/MgO Ceramics

B2O3掺杂对Ba0.6Sr0.4TiO3/MgO陶瓷介电性能的影响

属类：行业术语-中文论文标题-

The Influence of La2O3 Dopant on the Dielectric Properties of Ba0.6Sr0.4TiO3-MgO

La2O3掺杂对Ba0.6Sr0.4TiO3-MgO介电性能的影响

属类：行业术语-中文论文标题-

Effects of Pr Dopant on Grain Boundary and Electrical Properties of Ce5.2Sm0.8MoO(subscript 15-δ)

Pr掺杂对Ce5.2Sm0.8MoO(下标 15-δ)晶界及电性能的影响

属类：行业术语-中文论文标题-

Influence of Sb Dopant on the Conductivity and Gas Sensitivity of ZnO Thick Films

Sb掺杂对ZnO厚膜的电导和气敏性能的影响

属类：行业术语-中文论文标题-

Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact

半导体工艺材料的检验.用电容--电压法和水银接点确定晶朊半导体材料中掺杂物的断面

属类：行业标准名称-国际标准-DIN 50439-1982

Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 7: Determination of CO and H in nitrogen by gaschromatography and reduction gasdetector

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第7部分:用气体色谱法和还原气体探测器测定氮气中CO和H2

属类：行业标准名称-国际标准-DIN 50450-7-1995

Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 8: Determination of the concentration of the particle number in flowing nitrogen using laser particle counter

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第8部分:用激光粒子计数器测定流动氮中粒子数的浓度

属类：行业标准名称-国际标准-DIN 50450-8-2000

(Testing of materials for semiconductor technology-Determination of impurities in carrier gases and dopant gases-Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C-C-hydrocarbons in gaseous hydrogen chloride by ga

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.第9部分:用气相色谱法测定气态氯化氢中氧、氮、一氧化碳

属类：行业标准名称-国际标准-DIN 50450-9-2003

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of water traces in gaseous hydrogen chloride by a diphosphorus pentoxide cell

半导体工艺材料的检验.载气和掺杂气体中杂质的测定.用五氧化二磷件测定气相氯化氢中的微量水

属类：行业标准名称-国际标准-DIN 50450-5-1994

Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C-C-hydrocarbons in nitrogen by gas-chromatography

半导体工艺材料的检验.载运气体和混合气体中杂质的测定.用气体色谱法测定氮气中C1C3碳氢化合物

属类：行业标准名称-国际标准-DIN 50450-4-1993

Testing of materials for semiconductor technology-Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods-Part 1: Diborane in hydrogen diborane mixtures

半导体工艺材料的试验.用湿式化学法测定添加气体混合剂中成份的体积构成.第1部分:氢-乙硼烷混合物中的乙硼

属类：行业标准名称-国际标准-DIN 50457-1-1999

Testing of materials for semiconductor technology-Determination of the volume fraction of components in dopant gas mixtures by wet-chemical methods-Part 2: Phosphine in nitrogen phosphine mixtures

半导体工艺材料的试验.用湿式化学法测定添加气体混合剂中成份的体积构成.第2部分:氮-磷混合物中的磷

属类：行业标准名称-国际标准-DIN 50457-2-1999

Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程

属类：行业标准名称-国家标准名-GB/T13389-1992

The Effect of Dopant Sb on the Superhydrophilicity and the Microstructure of the Nanoscale TiO2 Thin Film

掺杂Sb对纳米TiO2薄膜的超亲水性和微结构的影响

属类：行业术语-中文论文标题-

Effect of Vanadium and silicon Dopant on Super-hydrophilicity of TiO2 Thin Films

掺杂钒和硅对TiO2薄膜超亲水性的影响

属类：行业术语-中文论文标题-

Influence of Dopant on Void Defects in Large-diameter CZSi Crystal

掺杂剂种类对大直径直拉硅单晶中void微缺陷的影响

属类：行业术语-中文论文标题-

Impact Studies of Dopant Concentration on the Electroluminescence Properties of Electrolumincent Devices Doped by Tetraphenylporphyrin

掺杂浓度对四苯基卟啉掺杂电致发光器件的发光性能影响研究

属类：行业术语-中文论文标题-

Highly Efficient Preparation of Enantiopure 1-phenyl-1, 2-ethanediol as Liquid Crystal Chiral Dopant by Immobilized Cells Catalyzing Deracemization

固定化细胞生物催化制备(S)-苯基乙二醇的研究

属类：行业术语-中文论文标题-

In contrast to the CVD process, MBE does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully

和化学气相淀积工艺相反,虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置。

属类：综合句库--

A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant

基于MBE生长的一种Be掺杂InGaAs基区的新结构InGaP/InGaAs/GaAs DHBT

属类：行业术语-中文论文标题-

To treat(a semiconductor)with a dopant .

加入掺杂剂用掺杂剂给(半导体)涂上保护层

属类：综合句库--

Effects on the Properties of Tetracyanoquinodimethane Thin Films by Dopant Poly (methyl Methacrylate)

聚甲基丙烯酸甲酯掺杂剂对7,7,8,8-四氰基苯醌二甲烷薄膜特性的影响

属类：行业术语-中文论文标题-

Improvement of Electroluminescene Utilizing Emitting Assist Dopant for Red Organic Light Emission

利用辅助掺杂改善红光有机电致发光器件的性能

属类：行业术语-中文论文标题-

Polyaniline Nanofibers Prepared by Using Ferric Chloride as Both Oxidant and Dopant

氯化铁氧化掺杂的聚苯胺纳米纤维团簇

属类：行业术语-中文论文标题-

Effect of Pb-dopant on the Dielectric Properties of BST Thin Films

铅掺杂对钛酸锶钡铁电薄膜性能的影响

属类：行业术语-中文论文标题-

Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9

砷化三氢的反应是典型的掺杂化学反应,图9显示了该反应的淀积过程。

属类：综合句库--

Preparation of Polypyrrole with Dopant of NaCl in Aqueous Solution by Voltammetric Cycling

水溶液中以NaCl为掺杂剂动电位法合成聚吡咯

属类：行业术语-中文论文标题-

Effect of Sr Acceptor Dopant on Electrical Properties of TiO2 Varistor Ceramics

锶受主掺杂对TiO2压敏陶瓷电性能的影响

属类：行业术语-中文论文标题-

Effect of ZnFe2O4 Dopant on Structural Phase Transformation and Photocatalytic Activity of TiO2 Nanopowders

铁酸锌掺杂对二氧化钛结构相变及光催化性能的影响

属类：行业术语-中文论文标题-

Additional contributions to the refractive index are expected to come from the dopant (6. 8)as well as from the electro-optic effect

预料其它对折射率的影响来自掺杂剂以及电光效应。

属类：综合句库--